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| F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150C - 65C to +175C D G Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads 0.004" Sq. Substrate is also Gate. At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 2 100 50 350 7 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 - 0.1 Min - 20 Typ - 30 - 30 - 100 1000 -7 Max Unit V pA mA V NJ1800D Process Test Conditions IG = - 1 A, VDS = OV VGS = - 10V, VDS = OV VDS = 10V, VGS = OV VDS = 10V, ID = 1 nA VDS = 10V, VGS = OV ID = 1 mA, VGS = OV VDS = 10V, VGS = OV VDS = 10V, VGS = OV f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-45 NJ1800D Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = 2.4 V Gfs as a Function of VGS(OFF) 500 Transconductance in mS 1000 VGS = O V Drain Current in mA 800 VGS = -0.5 V 600 VGS = -1.0 V 400 VGS = -1.5 V 200 VGS = -2.0 V 0 5 10 15 20 400 300 200 100 0 -1 -2 -3 -4 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Drain Saturation Current in mA Drain Source on Resistance in 1000 800 600 400 200 5 RDS(ON) as a Function of VGS(OFF) 4 3 2 0 -1 -2 -3 -4 0 -2 -4 -6 -8 Drain Source Cutoff Voltage in Volts Typical Gate Leakage Current as a Function of Ambient Temperature - 100 Gate Source Cutoff Voltage in Volts Input Capacitance as a Function of VGS 600 Input Capacitance in pF VDS = O V Leakage Current in nA IGSS @ VGS = - 20 V VDS = O V - 10 500 400 300 200 100 0 -1 - 0.1 - 0.01 0 25 50 75 100 125 150 -4 -8 - 12 - 16 Temperature in C Gate Source Voltage in Volts |
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